BQ4010YMA-85N vs BQ4011MA-150

Part Number
BQ4010YMA-85N
BQ4011MA-150
Category General Memory General Memory
Manufacturer Texas Instruments Texas Instruments
Description IC NVSRAM 64KBIT PARALLEL 28DIP IC NVSRAM 256KBIT PARALLEL 28DIP
Package Cut Tape (CT) -Reel®
Series - -
Voltage - Supply 4.5V ~ 5.5V 4.75V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA) 0°C ~ 70°C (TA)
Mounting Type Through Hole Through Hole
Package / Case 28-DIP Module (0.61\", 15.49mm) 28-DIP Module (0.61\", 15.49mm)
Supplier Device Package 28-DIP Module (18.42x37.72) 28-DIP Module (18.42x37.72)
Memory Size 64Kb (8K x 8) 256Kb (32K x 8)
Technology NVSRAM (Non-Volatile SRAM) NVSRAM (Non-Volatile SRAM)
Memory Type Non-Volatile Non-Volatile
Clock Frequency - -
Access Time 85 ns 150 ns
Memory Format NVSRAM NVSRAM
Write Cycle Time - Word, Page 85ns 150ns
Memory Interface Parallel Parallel
  • 1. Is there a relationship between the capacity and speed of memory?

    The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.

  • 2. What is the difference between cache and RAM?

    Cache is a high-speed memory between the CPU and the main memory, which is used to temporarily store data and instructions commonly used by the CPU to speed up the system. RAM is the main storage of the system, which is used to store data for applications and operating systems.

  • 3. What is the difference between SRAM and DRAM?

    SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.

  • 4. What is virtual memory and how does it work?

    Virtual memory is a technology that uses hard disk space as memory, allowing the system to use hard disk space to expand memory when physical RAM is insufficient, improving the system's multitasking capabilities.

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