BQ4011MA-200 vs BQ4010YMA-85N
| Part Number |
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| Category | General Memory | General Memory |
| Manufacturer | Texas Instruments | Texas Instruments |
| Description | IC NVSRAM 256KBIT PARALLEL 28DIP | IC NVSRAM 64KBIT PARALLEL 28DIP |
| Package | Tape & Reel (TR) | Cut Tape (CT) |
| Series | - | - |
| Voltage - Supply | 4.75V ~ 5.5V | 4.5V ~ 5.5V |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | 28-DIP Module (0.61\", 15.49mm) | 28-DIP Module (0.61\", 15.49mm) |
| Supplier Device Package | 28-DIP Module (18.42x37.72) | 28-DIP Module (18.42x37.72) |
| Memory Size | 256Kb (32K x 8) | 64Kb (8K x 8) |
| Technology | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Memory Type | Non-Volatile | Non-Volatile |
| Clock Frequency | - | - |
| Access Time | 200 ns | 85 ns |
| Memory Format | NVSRAM | NVSRAM |
| Write Cycle Time - Word, Page | 200ns | 85ns |
| Memory Interface | Parallel | Parallel |
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1. Is there a relationship between the capacity and speed of memory?
The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.
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2. How to measure the data read and write speed of memory?
The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.
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3. Why is the DRAM refresh rate important?
DRAM needs to be refreshed regularly to maintain data. The refresh rate affects the power consumption and speed of the memory. The higher the refresh rate, the faster the memory responds, but it also increases power consumption.
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4. How to extend the life of memory devices?
Measures such as regular data backup, avoiding excessive reading and writing of memory, ensuring proper temperature control, and preventing power fluctuations can help extend the life of memory.
