GJMK26A1600V vs R220CH12FK0
| Part Number |
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| Category | IGBTs-AC | IGBTs-AC |
| Manufacturer | GUOJINGKEJI | WESTCODE (IXYS) |
| Description | IGBT Modules | IGBT Modules |
| Package / Case | - | - |
| Product line | 3 Weeks | 3 Weeks |
| RoHS Status | Active | Active |
| Pbfree Code | ROHS3 Compliant | ROHS3 Compliant |
| Product status | yes | yes |
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1. What electronic components is IGBT?
IGBT, Its full name is the insulated gate bipolar transistor. It is a composite fully controlled voltage driven power semiconductor device composed of BJT (bipolar junction transistor) and MOSFET (metal oxide semiconductor field effect transistor). It has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR (giant transistor). MOSFET has small driving power and fast switching speed, but it has large conduction voltage drop and low current density; While the saturation voltage of GTR decreases, the current carrying density is high, but the driving current is large. IGBT is a new type of semiconductor device that combines the advantages of the above two devices, with low driving power and low saturation voltage.
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2. How does IGBT work?
IGBT is composed of N-channel MOS (Metal Oxide Semiconductor) field effect transistor and PNP bipolar transistor. It combines the advantages of MOSFET and bipolar transistor, with lower on-state voltage drop when on and higher breakdown voltage when off. Its working principle is as follows:
（1）On state:
In the on state of IGBT, when the control voltage Ugs is greater than the gate threshold voltage Uth, the N-channel MOSFET is in the on state, forming a channel, and the current can flow from the collector to the source. Since the on resistance of the N-channel MOSFET is small, the voltage drop when it is turned on is very small.
（2）Off state:
When the control voltage Ugs is less than the gate threshold voltage Uth, the N-channel MOSFET has no channel and is not conductive, and the IGBT enters the off state. At this time, the IGBT can be turned off by controlling the voltage Uce (collector-emitter voltage). Due to the presence of the PNP bipolar transistor, the IGBT can withstand higher voltages even under higher Uce.
The working principle of the IGBT can be explained by the example of a self-locking switch. The N-channel MOSFET is equivalent to the door lock of the self-locking switch, and the state of the door lock can be controlled to achieve on and off; the PNP bipolar transistor is equivalent to the key of the self-locking switch. Even in the off state, as long as the key is inserted (providing a higher Uce), the switch can still be opened. -
3. What are the main parameters of IGBT?
IGBT (Insulated Gate Bipolar Transistor) is a power semiconductor device used to control large currents and high voltages. Its four main parameters are as follows:
(1) Maximum rated voltage: This refers to the maximum collector-emitter voltage that the IGBT can withstand under normal operating conditions. Exceeding this voltage may cause device damage.
(2) Maximum rated current: This refers to the maximum collector current that the IGBT can withstand under normal operating conditions. Exceeding this current may cause the device to overheat or be damaged.
(3) Maximum rated power: This refers to the maximum power that the IGBT can withstand under normal operating conditions. Exceeding this power may cause the device to overheat or be damaged.
(4) Switching speed: The switching speed of the IGBT refers to the time required from on to off (or vice versa). Fast switching speed helps reduce power loss and improve efficiency, but too fast switching speed may increase the transient voltage and current drops, causing device damage. -
4. What are the advantages and disadvantages of IGBT?
IGBT combines many advantages of BJT and MOS tube:
High voltage and current handling capability.
Extremely high input impedance.
Can switch high current at low voltage.
Voltage control, no input current and low input loss.
Simple gate drive circuit, reducing drive requirements.
Easy to turn on by applying positive voltage and turn off by zero or negative voltage.
Extremely low on-resistance.
High current density, making the chip size smaller.
Higher power gain than BJT and MOS tube.
Faster switching speed than BJT.
Can switch high current levels with low control voltage.
Bipolar nature enhances conductivity and improves safety.
However, IGBT also has some shortcomings:
Slightly slower switching speed than MOS tube.
Unidirectional, cannot directly handle AC waveform, requires additional circuit.
Cannot block higher reverse voltage.
Higher cost than BJT and MOS tube.
PNPN structure is similar to thyristor, with latching problem.
Compared with PMOS tube, the turn-off time is longer.
