80-M212PMB035M7-K220A71

VINCOTECH 80-M212PMB035M7-K220A71

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  • 80-M212PMB035M7-K220A71
  • VINCOTECH
  • MiniSKiiP® PIM 2 Series production 1200 V 35 A
  • IGBTs-AC
  • 80-M212PMB035M7-K220A71 Datasheet
  • -
  • -
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1949
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is 80-M212PMB035M7-K220A71

VINCOTECH Part Number 80-M212PMB035M7-K220A71IGBTs-AC), developed and manufactured by VINCOTECH, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

80-M212PMB035M7-K220A71 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

80-M212PMB035M7-K220A71 Specifications

  • Part Number80-M212PMB035M7-K220A71
  • CategoryIGBTs-AC
  • ManufacturerVINCOTECH
  • DescriptionMiniSKiiP® PIM 2 Series production 1200 V 35 A
  • Package / Case-
  • Topology35 A
  • ConfigurationAl2O3
  • Product line3 Weeks
  • Break down voltageMiniSKiiP® PIM 2
  • Standard Packing Quantity1200 V
  • Chip technology (main switch)72
  • Electrical interconnectionIGBT M7
  • Part StatusSpring contact
  • RoHS StatusActive
  • Pbfree CodeROHS3 Compliant
  • Product statusyes
  • Nominal chip current ratingSeries production
  • Base isolation (e.g. ceramic)PIM (CIB)

Application of 80-M212PMB035M7-K220A71

IGBT has the characteristics of high voltage resistance, reduced conduction voltage, and fast switching speed, making it very suitable for application in converter systems with DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives, and other fields.

80-M212PMB035M7-K220A71 Datasheet

80-M212PMB035M7-K220A71 Datasheet , 35 A,Al2O3,3 Weeks,MiniSKiiP® PIM 2,1200 V,72,IGBT M7,Spring contact,Active,ROHS3 Compliant,yes,Series production,PIM (CIB)

80-M212PMB035M7-K220A71 Classification

IGBTs-AC

IGBT (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (Bipolar junction transistor) and MOS (insulated gate field effect transistor), which has the advantages of high input impedance of MOSFET and low on-state voltage drop of GTR.IGBT module is a modular semiconductor product composed of IGBT chip and FWD (freewheeling diode chip) through specific circuit bridging packaging. It has the characteristics of energy saving, easy installation and maintenance, and stable heat dissipation. Jinftry is a leading global distributor of electronic components, distributing IGBT modules and IGBT products of many internationally renowned brands, including Mitsubishi, Semikron, Infineon, FUJI, FUJITSU, VICOR, ABB, Siemens, Sanken, EUPEC, etc. Are you looking for a partner for IGBT modules? Jinftry is your best supplier choice. With low price advantages and rich supply chain resources, we can provide you with original & new, excess, obsolete/EOL and hard-to-find materials.

FAQ about IGBTs-AC

  • 1. How does IGBT work?

    IGBT is composed of N-channel MOS (Metal Oxide Semiconductor) field effect transistor and PNP bipolar transistor. It combines the advantages of MOSFET and bipolar transistor, with lower on-state voltage drop when on and higher breakdown voltage when off. Its working principle is as follows:
    (1)On state:
    In the on state of IGBT, when the control voltage Ugs is greater than the gate threshold voltage Uth, the N-channel MOSFET is in the on state, forming a channel, and the current can flow from the collector to the source. Since the on resistance of the N-channel MOSFET is small, the voltage drop when it is turned on is very small.
    (2)Off state:
    When the control voltage Ugs is less than the gate threshold voltage Uth, the N-channel MOSFET has no channel and is not conductive, and the IGBT enters the off state. At this time, the IGBT can be turned off by controlling the voltage Uce (collector-emitter voltage). Due to the presence of the PNP bipolar transistor, the IGBT can withstand higher voltages even under higher Uce.
    The working principle of the IGBT can be explained by the example of a self-locking switch. The N-channel MOSFET is equivalent to the door lock of the self-locking switch, and the state of the door lock can be controlled to achieve on and off; the PNP bipolar transistor is equivalent to the key of the self-locking switch. Even in the off state, as long as the key is inserted (providing a higher Uce), the switch can still be opened.

  • 2. What are the roles and functions of IGBT?

    IGBT plays an important role in power transmission and switch control. Its main functions include:
    Power regulation: IGBT can accurately regulate power according to the input signal to achieve efficient power transmission and control.
    High voltage isolation: The insulating gate layer inside the IGBT isolates the control end from the power structure to ensure the safe transmission of high voltage between the control signal and the power signal.
    Fast switching speed: IGBT has a fast switching speed, which enables it to switch quickly in an instantaneous circuit environment.
    Low turn-on voltage drop: The turn-on voltage drop of IGBT is low, which can reduce energy loss and power consumption.

  • 3. What are the application fields of IGBT?

    The main application areas of IGBT power semiconductors include:
    (1) Motor control: In the field of motor control, IGBT, as the core device of the inverter, can convert DC power into AC power with adjustable frequency, thereby driving the motor for precise control. Whether it is a large motor on an industrial production line or a drive motor in a new energy vehicle, it is inseparable from the support of IGBT. In addition, IGBT also plays an important role in the high-power DC/AC inverter of the electric control system and is the key to achieving efficient operation of the motor.
    (2) Power electronics: IGBT is one of the core devices in the field of power electronics and is widely used in various power supply, battery charging, power management, power conversion, power regulation, power protection, power filtering, power distribution, power control and power monitoring systems. Its high reliability, simple drive, easy protection and high switching frequency make it one of the most competitive devices in power electronics systems.
    (3) New energy field:
    In the field of new energy, the application of IGBT is becoming more and more extensive. In photovoltaic and wind power equipment, IGBT is the core component of the inverter, which can convert solar energy and wind energy into stable electricity to supply the power grid. In new energy vehicles, IGBT modules are core technical components of electric vehicles and charging piles, accounting for nearly 5% of the cost of electric vehicles and about 20% of the cost of charging piles. At the same time, IGBT also plays an important role in energy storage systems to ensure efficient conversion and storage of energy.
    (4) Rail transit field: IGBT is the mainstream power electronic device for traction converters and various auxiliary converters. AC transmission technology is one of the core technologies of modern rail transit, and IGBT is one of the most core devices in traction converters.

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VINCOTECH
VINCOTECH
Vincotech, a German company, is an international company controlled by Mitsubishi Electric with more than 800 employees worldwide. As a mature and reliable supplier in the power module market, Vincotech is committed to developing...
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