Intersil EL7457CLZ-T7
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- EL7457CLZ-T7
- Intersil
- IC DRIVER QUAD 40MHZ HS 16-QFN
- PMIC - Gate Drivers
- EL7457CLZ-T7 Datasheet
- 16-VQFN Exposed Pad
- 16-VQFN Exposed Pad
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Lead free / RoHS Compliant - 881
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What is EL7457CLZ-T7
Intersil Part Number EL7457CLZ-T7（PMIC - Gate Drivers）, developed and manufactured by Intersil, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
EL7457CLZ-T7 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
EL7457CLZ-T7 Specifications
- Part NumberEL7457CLZ-T7
- CategoryPMIC - Gate Drivers
- ManufacturerIntersil
- DescriptionIC DRIVER QUAD 40MHZ HS 16-QFN
- Package16-VQFN Exposed Pad
- Series-
- Voltage - Supply4.5 V ~ 18 V
- Operating Temperature-40°C ~ 85°C (TA)
- Mounting TypeSurface Mount
- Package / Case16-VQFN Exposed Pad
- Supplier Device Package16-QFN (4x4)
- Input TypeNon-Inverting
- Channel TypeIndependent
- Rise / Fall Time (Typ)13.5ns, 13ns
- Driven ConfigurationHigh-Side or Low-Side
- Number of Drivers4
- Gate TypeN-Channel, P-Channel MOSFET
- Logic Voltage - VIL, VIH0.8V, 2V
- Current - Peak Output (Source, Sink)2A, 2A
Application of EL7457CLZ-T7
EL7457CLZ-T7 Datasheet
EL7457CLZ-T7 Datasheet , 16-VQFN Exposed Pad,4.5 V ~ 18 V,-40°C ~ 85°C (TA),Surface Mount,16-VQFN Exposed Pad,16-QFN (4x4),Non-Inverting,Independent,13.5ns, 13ns,High-Side or Low-Side,4,N-Channel, P-Channel MOSFET,0.8V, 2V,2A, 2A
EL7457CLZ-T7 Classification
PMIC - Gate Drivers
FAQ about PMIC - Gate Drivers
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1. What are the different types of gate drivers?
There are mainly the following types of gate drivers:
High-frequency high-voltage gate driver: This driver can drive two N-channel MOSFETs, supports a power supply voltage of up to 100V, has strong driving capabilities, is suitable for MOSFETs with high gate capacitance, and can reduce switching losses. It also has features such as undervoltage lockout and adaptive shoot-through protection.
HL-type gate driver: The HL-type driver drives two N-channel MOSFETs in a half-bridge configuration and supports a power supply voltage of up to 140V. It has independent control outputs and strong anti-interference ability, and is suitable for application scenarios that require independent control of two MOSFETs. The HL type driver also has functions such as UVLO, TTL/CMOS compatible input, adjustable turn-on/off delay and shoot-through protection.
Pulse transformer drive: This driver does not require a separate drive voltage, and applies a high voltage to the gate through a pulse transformer, which is suitable for half-bridge or full-bridge circuits. It uses a capacitor and pulse transformer in series to increase the switching speed, and quickly resets the pulse transformer through a Zener diode.
Optocoupler and floating power supply drive: This driver uses an optocoupler to isolate the microcontroller and power transistor, and requires a separate floating power supply. The optocoupler output requires a separate power supply, which is suitable for high-side drive of half-bridge or full-bridge.
Push-pull circuit: The push-pull circuit is suitable for situations where the drive current is insufficient. It provides sufficient drive current by alternating between two transistors, which is suitable for application scenarios that require high drive current.
Half-bridge/full-bridge high-end drive: This driver applies a high voltage to the gate, which is suitable for half-bridge or full-bridge circuits. Since the source voltage of the high-end MOSFET changes, it needs to be powered independently and cannot share a ground with the low-end MOSFET.
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2. Why is a gate driver needed?
The main reasons for the need for gate drivers include signal amplification, electrical isolation, and protection mechanisms.
Signal Amplification
The main function of the gate driver is to convert the low-voltage signal of the controller into a high-voltage drive signal, thereby achieving effective control of the power device. This signal amplification function ensures that the power device can be stably turned on and off, improving the efficiency and reliability of the system.
Electrical Isolation
In many applications, electrical isolation between the control circuit and the power semiconductor is very important to prevent voltage feedback or ground loop problems. Gate drivers usually use optocouplers or other isolation methods to maintain this isolation, ensuring that the control circuit is not affected by the power circuit, thereby improving the stability and safety of the system.
Protection Mechanism
Gate drivers also integrate a variety of protection functions, such as overcurrent, overvoltage protection, and short-circuit protection. These protection mechanisms can effectively prevent power device damage and improve the reliability and safety of the system.
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3. What is the difference between MOSFET and IGBT gate drivers?
The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
Drive Voltage and Drive Current
MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
Driving method
MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.
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