ESDR0502NMUTBG

ON Semiconductor ESDR0502NMUTBG

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  • ESDR0502NMUTBG
  • ON Semiconductor
  • TVS DIODE 5.5VWM 6UDFN
  • TVS - Diodes
  • ESDR0502NMUTBG Datasheet
  • 6-UFDFN
  • 6-UFDFN
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 9948
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is ESDR0502NMUTBG

ON Semiconductor Part Number ESDR0502NMUTBG（TVS - Diodes）, developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

ESDR0502NMUTBG is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

ESDR0502NMUTBG Specifications

  • Part NumberESDR0502NMUTBG
  • CategoryTVS - Diodes
  • ManufacturerON Semiconductor
  • DescriptionTVS DIODE 5.5VWM 6UDFN
  • Package6-UFDFN
  • SeriesAutomotive, AEC-Q101
  • TypeSteering (Rail to Rail)
  • Operating Temperature-40°C ~ 125°C (TJ)
  • Mounting TypeSurface Mount
  • Package / Case6-UFDFN
  • Supplier Device Package6-UDFN (1.2x1)
  • ApplicationsAutomotive, Ethernet
  • Unidirectional Channels3
  • Voltage - Reverse Standoff (Typ)5.5V (Max)
  • Voltage - Breakdown (Min)6V
  • Power - Peak Pulse100W
  • Power Line ProtectionYes
  • Capacitance @ Frequency0.3pF @ 1MHz

Application of ESDR0502NMUTBG

TVS - Diodes play a vital role in the design of electronic products, and its application fields are very wide. In the field of consumer electronics, such as smartphones, tablets, televisions, etc., TVS diodes are used to protect internal integrated circuits from electrostatic discharge and power fluctuations. In the field of industrial automation, they are used to protect critical equipment such as motor drives and PLC (programmable logic controllers) to ensure the stable operation of production lines. In addition, TVS diodes are also essential components in automotive electronic systems, which can protect on-board electronic systems from transient voltages caused by engine ignition, load mutations, etc. In the field of communication and data transmission, TVS diodes are also used to protect signal transmission lines to ensure the integrity and reliability of data transmission. In general, TVS diodes, with their excellent transient voltage protection capabilities, play an irreplaceable role in ensuring the safe and stable operation of electronic equipment.

ESDR0502NMUTBG Datasheet

ESDR0502NMUTBG Datasheet , 6-UFDFN,Automotive, AEC-Q101,Steering (Rail to Rail),-40°C ~ 125°C (TJ),Surface Mount,6-UFDFN,6-UDFN (1.2x1),Automotive, Ethernet,3,5.5V (Max),6V,100W,Yes,0.3pF @ 1MHz

ESDR0502NMUTBG Classification

TVS - Diodes

TVS - Diodes are electronic components designed to protect circuits from transient overvoltage damage. They protect other sensitive components in the circuit from damage by quickly switching on and directing excess transient voltage to ground or power supply. TVS diodes are typically constructed of PN junction or metal oxide semiconductor structures with extremely fast response times and low clamping voltage characteristics. Its design principle is based on the avalanche breakdown effect, that is, when a specific voltage threshold is reached, the diode will rapidly change from a high resistance state to a low resistance state, limiting the transient voltage to a safe level. TVS diodes are used in a wide variety of electronic devices, especially those that need to protect critical circuits from lightning strikes, electrostatic discharges, or other transient voltage events.

FAQ about TVS - Diodes

  • 1. Are TVS diodes and Zener diodes the same?

    TVS diodes and Zener diodes have significant differences in functionality and characteristics, so they are not identical.
    Definition and purpose
    Zener diode: Zener diode is a diode that uses a PN junction for reverse breakdown. It is mainly used to ensure voltage stability. It has a high resistance state before the reverse breakdown voltage and is in a low resistance state after exceeding this critical point. It is widely used in various voltage stabilizing circuits and reference voltage components.
    TVS Diode: TVS diode (Transient Suppression Diode) has surge absorption capability and is mainly used to protect circuits from damage caused by transient high voltages such as surges and electrostatic discharge (ESD). It can absorb a large amount of instantaneous current and voltage in a short period of time, protecting the subsequent equipment or circuits from damage.

  • 2. How do TVS diodes fail?

    The failure modes of TVS diodes mainly include short circuit failure, open circuit failure and performance degradation‌. These failure modes can have a serious impact on the normal operation and protection functions of the circuit.
    short circuit fault
    Short circuit failure is one of the most common failure modes of TVS diodes. When a TVS diode is short-circuited, it changes to a low-impedance state, allowing a large amount of current to pass through, which may cause the circuit to not function properly and may even damage other circuit components. Causes of short circuit faults include:
    Thermal breakdown: In a high temperature environment or when subjected to excessive transient energy impact, the PN junction of the TVS diode may undergo thermal breakdown, resulting in a short circuit.
    Over-electrical stress: When the transient pulse energy exceeds the energy that the TVS can withstand, it will cause over-electrical stress damage and even directly cause burnout.
    Manufacturing process issues: Such as chip bonding interface voids, mesa defects, strong accumulation layer or strong inversion layer on the surface, chip cracks, uneven impurity diffusion, etc., which may cause short circuit failures of TVS diodes during manufacturing or use.

  • 3. What is the difference between TVS diodes and MOVs?

    The main differences between TVS diodes and MOV varistors lie in their working principles, application scenarios and performance parameters.
    Working principle
    TVS diode: TVS diode (Transient Voltage Suppressor) is a semiconductor device with a high-sensitivity N/P junction. When the reverse voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and introduce the surge current into the ground, thereby protecting the subsequent circuit. The response speed of TVS diodes is very fast, usually within nanoseconds.
    MOV varistor: MOV varistor (Metal-Oxide Varistor) is a multi-layer varistor made of multi-layer zinc oxide material. When the voltage exceeds its varistor voltage, the MOV will conduct, absorb the surge energy, and clamp the voltage within a safe range. MOV has a long response time, usually completing the response within microseconds.

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ON Semiconductor
ON Semiconductor
Established in 1999, ON Semiconductor is a globally renowned leading semiconductor product supplier headquartered in Phoenix, Arizona, USA, with over 30000 employees. At first, ON Semiconductor was a branch of Phoenix Worldwide Semiconductor and later...
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