Fairchild Semiconductor FAN3213TMX
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- FAN3213TMX
- Fairchild Semiconductor
- FULL BRIDGE BASED PERIPHERAL DRI
- PMIC - Gate Drivers
- FAN3213TMX Datasheet
- 8-SOIC (0.154\", 3.90mm Width)
- Tube
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Lead free / RoHS Compliant - 25297
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is FAN3213TMX
Fairchild Semiconductor Part Number FAN3213TMX（PMIC - Gate Drivers）, developed and manufactured by Fairchild Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
FAN3213TMX is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
FAN3213TMX Specifications
- Part NumberFAN3213TMX
- CategoryPMIC - Gate Drivers
- ManufacturerFairchild Semiconductor
- DescriptionFULL BRIDGE BASED PERIPHERAL DRI
- PackageTube
- Series-
- Voltage - Supply4.5V ~ 18V
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154\", 3.90mm Width)
- Supplier Device Package8-SOIC
- Input TypeInverting
- Channel TypeSynchronous
- Rise / Fall Time (Typ)12ns, 9ns
- Driven ConfigurationLow-Side
- Number of Drivers2
- Gate TypeN-Channel MOSFET
- Logic Voltage - VIL, VIH0.8V, 2V
- Current - Peak Output (Source, Sink)5A, 5A
- High Side Voltage - Max (Bootstrap)-
Application of FAN3213TMX
FAN3213TMX Datasheet
FAN3213TMX Datasheet , Tube,4.5V ~ 18V,-55°C ~ 150°C (TJ),Surface Mount,8-SOIC (0.154\", 3.90mm Width),8-SOIC,Inverting,Synchronous,12ns, 9ns,Low-Side,2,N-Channel MOSFET,0.8V, 2V,5A, 5A
FAN3213TMX Classification
PMIC - Gate Drivers
FAQ about PMIC - Gate Drivers
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1. What is a gate driver?
Circuit, gate signal enhancement, controller
A gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches ，The gate driver controls the gate of the MOSFET or IGBT by converting the signal output by the controller into a high-voltage, high-current pulse, thereby improving the performance, reliability and service life of these devices.
Working principle
The gate driver is mainly composed of an input stage, a driver stage and an output stage:
Input stage: responsible for receiving the signal output by the controller and converting it into a TTL or CMOS logic level.
Driver stage: amplifies and converts the signal to generate a high-voltage, high-current pulse signal.
Output stage: uses these pulse signals to control the gate of the MOSFET or IGBT. -
2. What is an active gate driver?
An active gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches. It controls the gate of MOSFET or IGBT by converting the signal output by the controller into high-voltage, high-current pulses, thereby improving the performance, reliability and service life of these devices.
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3. What is the difference between MOSFET and IGBT gate drivers?
The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
Drive Voltage and Drive Current
MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
Driving method
MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.
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