Fairchild Semiconductor FAN7393AMX
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- FAN7393AMX
- Fairchild Semiconductor
- IC GATE DVR HALF BRIDGE 14SOIC
- PMIC - Gate Drivers
- FAN7393AMX Datasheet
- 14-SOIC (0.154", 3.90mm Width)
- 14-SOIC (0.154", 3.90mm Width)
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Lead free / RoHS Compliant - 1529
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is FAN7393AMX
Fairchild Semiconductor Part Number FAN7393AMX（PMIC - Gate Drivers）, developed and manufactured by Fairchild Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
FAN7393AMX is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
FAN7393AMX Specifications
- Part NumberFAN7393AMX
- CategoryPMIC - Gate Drivers
- ManufacturerFairchild Semiconductor
- DescriptionIC GATE DVR HALF BRIDGE 14SOIC
- Package14-SOIC (0.154", 3.90mm Width)
- Series-
- Voltage - Supply10 V ~ 20 V
- Operating Temperature-40°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / Case14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package14-SOIC
- Input TypeNon-Inverting
- Channel TypeSynchronous
- Rise / Fall Time (Typ)25ns, 15ns
- Driven ConfigurationHalf-Bridge
- Number of Drivers2
- Gate TypeIGBT, N-Channel MOSFET
- Logic Voltage - VIL, VIH0.8V, 2.5V
- Current - Peak Output (Source, Sink)2.5A, 2.5A
- High Side Voltage - Max (Bootstrap)600V
Application of FAN7393AMX
FAN7393AMX Datasheet
FAN7393AMX Datasheet , 14-SOIC (0.154", 3.90mm Width),10 V ~ 20 V,-40°C ~ 150°C (TJ),Surface Mount,14-SOIC (0.154", 3.90mm Width),14-SOIC,Non-Inverting,Synchronous,25ns, 15ns,Half-Bridge,2,IGBT, N-Channel MOSFET,0.8V, 2.5V,2.5A
FAN7393AMX Classification
PMIC - Gate Drivers
FAQ about PMIC - Gate Drivers
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1. What is a gate driver?
Circuit, gate signal enhancement, controller
A gate driver is a circuit that is mainly used to enhance the gate signal of a field effect transistor (MOSFET) or an insulated gate bipolar transistor (IGBT) so that the controller can better control the operation of these semiconductor switches ，The gate driver controls the gate of the MOSFET or IGBT by converting the signal output by the controller into a high-voltage, high-current pulse, thereby improving the performance, reliability and service life of these devices.
Working principle
The gate driver is mainly composed of an input stage, a driver stage and an output stage:
Input stage: responsible for receiving the signal output by the controller and converting it into a TTL or CMOS logic level.
Driver stage: amplifies and converts the signal to generate a high-voltage, high-current pulse signal.
Output stage: uses these pulse signals to control the gate of the MOSFET or IGBT. -
2. What are the different types of gate drivers?
There are mainly the following types of gate drivers:
High-frequency high-voltage gate driver: This driver can drive two N-channel MOSFETs, supports a power supply voltage of up to 100V, has strong driving capabilities, is suitable for MOSFETs with high gate capacitance, and can reduce switching losses. It also has features such as undervoltage lockout and adaptive shoot-through protection.
HL-type gate driver: The HL-type driver drives two N-channel MOSFETs in a half-bridge configuration and supports a power supply voltage of up to 140V. It has independent control outputs and strong anti-interference ability, and is suitable for application scenarios that require independent control of two MOSFETs. The HL type driver also has functions such as UVLO, TTL/CMOS compatible input, adjustable turn-on/off delay and shoot-through protection.
Pulse transformer drive: This driver does not require a separate drive voltage, and applies a high voltage to the gate through a pulse transformer, which is suitable for half-bridge or full-bridge circuits. It uses a capacitor and pulse transformer in series to increase the switching speed, and quickly resets the pulse transformer through a Zener diode.
Optocoupler and floating power supply drive: This driver uses an optocoupler to isolate the microcontroller and power transistor, and requires a separate floating power supply. The optocoupler output requires a separate power supply, which is suitable for high-side drive of half-bridge or full-bridge.
Push-pull circuit: The push-pull circuit is suitable for situations where the drive current is insufficient. It provides sufficient drive current by alternating between two transistors, which is suitable for application scenarios that require high drive current.
Half-bridge/full-bridge high-end drive: This driver applies a high voltage to the gate, which is suitable for half-bridge or full-bridge circuits. Since the source voltage of the high-end MOSFET changes, it needs to be powered independently and cannot share a ground with the low-end MOSFET.
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3. What is the difference between MOSFET and IGBT gate drivers?
The gate drivers of MOSFET and IGBT have significant differences in drive voltage, drive current, and drive mode.
Drive Voltage and Drive Current
MOSFET: The gate drive voltage of MOSFET is low, usually between 10V and 20V. Due to its structural characteristics, the driving current of MOSFET is also relatively small, which is suitable for using a smaller driving circuit.
IGBT: The gate driving voltage of IGBT is relatively high, usually between 15V and 20V. Due to its composite structure, IGBT requires a large driving current to control its conduction and cutoff, and usually requires a special driving circuit to provide sufficient driving power.
Driving method
MOSFET: The switching speed of MOSFET is very fast and suitable for high-frequency applications. Its driving method is relatively simple, and the gate can be directly controlled by voltage to achieve fast switching action.
IGBT: The switching speed of IGBT is slow and suitable for low-frequency applications. Due to its composite structure, IGBT requires a larger driving current and a more complex driving circuit to ensure its stable operation. IGBT usually requires positive and negative voltages to control its conduction and cutoff, especially when it is turned off, a negative voltage is required to eliminate the current tailing effect.
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