Linear Integrated Systems, Inc. LS3550SA DIE
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- LS3550SA DIE
- Linear Integrated Systems, Inc.
- HIGHER CURRENT, SINGLE NPN TRANS
- Transistors - Bipolar (BJT) - Single
- LS3550SA DIE Datasheet
- Die
- Tray
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Lead free / RoHS Compliant - 10604
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What is LS3550SA DIE
Linear Integrated Systems, Inc. Part Number LS3550SA DIE（Transistors - Bipolar (BJT) - Single）, developed and manufactured by Linear Integrated Systems, Inc., distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
LS3550SA DIE is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
LS3550SA DIE Specifications
- Part NumberLS3550SA DIE
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerLinear Integrated Systems, Inc.
- DescriptionHIGHER CURRENT, SINGLE NPN TRANS
- PackageTray
- Series-
- Operating Temperature-55°C ~ 150°C (TJ)
- Mounting TypeSurface Mount
- Package / CaseDie
- Supplier Device PackageDie
- Power - Max-
- Transistor TypePNP
- Current - Collector (Ic) (Max)10 mA
- Voltage - Collector Emitter Breakdown (Max)45 V
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)200pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
- Frequency - Transition600MHz
Application of LS3550SA DIE
LS3550SA DIE Datasheet
LS3550SA DIE Datasheet , Tray,-55°C ~ 150°C (TJ),Surface Mount,Die,Die,PNP,10 mA,45 V,250mV @ 10mA, 100mA,200pA (ICBO),150 @ 1mA, 5V,600MHz
LS3550SA DIE Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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2. Is PNP transistor bipolar?
PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).
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3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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