MJE18204

ON Semiconductor MJE18204

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  • MJE18204
  • ON Semiconductor
  • POWER BIPOLAR TRANSISTOR NPN
  • Transistors - Bipolar (BJT) - Single
  • MJE18204 Datasheet
  • -
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 19797
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates

What is MJE18204

ON Semiconductor Part Number MJE18204Transistors - Bipolar (BJT) - Single), developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

MJE18204 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

MJE18204 Specifications

  • Part NumberMJE18204
  • CategoryTransistors - Bipolar (BJT) - Single
  • ManufacturerON Semiconductor
  • DescriptionPOWER BIPOLAR TRANSISTOR NPN
  • PackageBulk
  • Series-
  • Operating Temperature-
  • Mounting Type-
  • Package / Case-
  • Supplier Device Package-
  • Power - Max-
  • Transistor Type-
  • Current - Collector (Ic) (Max)-
  • Voltage - Collector Emitter Breakdown (Max)-
  • Vce Saturation (Max) @ Ib, Ic-
  • Current - Collector Cutoff (Max)-
  • DC Current Gain (hFE) (Min) @ Ic, Vce-
  • Frequency - Transition-

Application of MJE18204

Bipolar - Single as the main function of the amplifier and switching element. In amplifier applications, BJTS are capable of amplifying the current of the input signal to drive a larger load. In switching applications, the BJT can be used as a high-speed switch to turn the current path between the collector and the emitter on or off by controlling the base current. In addition, BJT can also be used to build oscillators, mixers and other circuits.

MJE18204 Datasheet

MJE18204 Datasheet , Bulk

MJE18204 Classification

Transistors - Bipolar (BJT) - Single

Bipolar (BJT) -Single refers to a single Bipolar Junction Transistor (BJT), which is a commonly used semiconductor device with two PN junctions, usually composed of an NPN or PNP structure. The BJT is capable of amplifying the current and regulating the current between the collector and emitter by controlling the base current. A single BJT is the basic building block of many electronic circuits and can be used for a variety of functions such as amplification, switching, and signal processing.

FAQ about Transistors - Bipolar (BJT) - Single

  • 1. Is BJT bipolar or unipolar?

    BJT (bipolar junction transistor) is bipolar. BJT (bipolar junction transistor) is composed of two N-type semiconductors sandwiched between a P-type semiconductor, with an emitter junction formed between the emitter and the base, and a collector junction formed between the collector and the base. When the power is turned on, the majority carriers (electrons) in the emitter and the majority carriers (holes) in the base diffuse with each other, forming a current amplification effect.
    The working principle of BJT is to achieve current amplification through the control of two PN junctions (emitter junction and collector junction). When the emitter junction is forward biased, electrons are injected from the emitter region into the base region; when the collector junction is reverse biased, electrons are injected from the base region into the collector region. Because the base region is very thin and the impurity content is strictly controlled, most electrons can enter the collector region through the collector junction to form the collector current Ic, and only a small number of electrons recombine with holes in the base region to form the base current Ib. Therefore, by controlling the base current Ib, the collector current Ic can be amplified to achieve current amplification.

  • 2. What is the difference between bipolar transistors and CMOS transistors?

    The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
    Working principle
    Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
    CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.

  • 3. Are bipolar transistors still in use?

    Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.

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ON Semiconductor
ON Semiconductor
Established in 1999, ON Semiconductor is a globally renowned leading semiconductor product supplier headquartered in Phoenix, Arizona, USA, with over 30000 employees. At first, ON Semiconductor was a branch of Phoenix Worldwide Semiconductor and later...
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