NTE Electronics, Inc NTE72
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- NTE72
- NTE Electronics, Inc
- TRANS NPN 80V 10A TO61
- Transistors - Bipolar (BJT) - Single
- NTE72 Datasheet
- TO-211MA, TO-210AC, TO-61-4, Stud
- Bag
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Lead free / RoHS Compliant - 19544
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
What is NTE72
NTE Electronics, Inc Part Number NTE72（Transistors - Bipolar (BJT) - Single）, developed and manufactured by NTE Electronics, Inc, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
NTE72 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
NTE72 Specifications
- Part NumberNTE72
- CategoryTransistors - Bipolar (BJT) - Single
- ManufacturerNTE Electronics, Inc
- DescriptionTRANS NPN 80V 10A TO61
- PackageBag
- Series-
- Operating Temperature-65°C ~ 200°C (TJ)
- Mounting TypeStud Mount
- Package / CaseTO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device PackageTO-61
- Power - Max100 W
- Transistor TypeNPN
- Current - Collector (Ic) (Max)10 A
- Voltage - Collector Emitter Breakdown (Max)80 V
- Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 10A
- Current - Collector Cutoff (Max)500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5A, 5V
- Frequency - Transition30MHz
Application of NTE72
NTE72 Datasheet
NTE72 Datasheet , Bag,-65°C ~ 200°C (TJ),Stud Mount,TO-211MA, TO-210AC, TO-61-4, Stud,TO-61,100 W,NPN,10 A,80 V,1.5V @ 1A, 10A,500µA,70 @ 5A, 5V,30MHz
NTE72 Classification
Transistors - Bipolar (BJT) - Single
FAQ about Transistors - Bipolar (BJT) - Single
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1. What is the difference between bipolar transistors and CMOS transistors?
The main differences between bipolar transistors and CMOS transistors are in working principles, structures, application scenarios, and power consumption.
Working principle
Bipolar transistor: Bipolar transistors have two types of carriers (holes and electrons) involved in conduction, and they are made of three parts of semiconductors with different doping levels. In bipolar transistors, the emitter emits free electrons, the collector receives holes, and the base controls the on and off of the current.
CMOS transistor: CMOS transistors have only one type of carrier (electrons or holes) involved in conduction, usually using a combination of P-type semiconductors and N-type semiconductors. In CMOS transistors, when the gate voltage is zero, the current does not flow. Only when the gate voltage reaches a certain value, the current will flow, which makes the CMOS transistor consume almost no power when static.
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2. Is BJT transistor a bipolar device?
BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response. -
3. What are the two types of BJT transistors?
There are two main types of BJT transistors: NPN and PNP.
NPN transistor
In an NPN transistor, current flows from the collector to the emitter. The base of an NPN transistor must be connected to a positive voltage for current to flow in. As the current flowing to the base increases, the transistor gradually turns on until the current is completely conducted from the collector to the emitter.
PNP Transistor
In a PNP transistor, the current flows from the emitter to the collector. Therefore, the base of the PNP transistor must be grounded. When the output current is small and the base is negative relative to the emitter, the transistor will turn on and a larger current will flow from the emitter to the collector. Basically, if the base and collector are negative relative to the emitter, the PNP transistor will conduct current from the emitter to the collector.
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