Harris Corporation RF1S25N06SMR4643
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- RF1S25N06SMR4643
- Harris Corporation
- 25A, 60V, 0.047 OHM, N-CHANNEL
- Transistors - FETs, MOSFETs - Arrays
- RF1S25N06SMR4643 Datasheet
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- Bulk
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Lead free / RoHS Compliant - 23216
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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What is RF1S25N06SMR4643
Harris Corporation Part Number RF1S25N06SMR4643（Transistors - FETs, MOSFETs - Arrays）, developed and manufactured by Harris Corporation, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.
RF1S25N06SMR4643 is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.
RF1S25N06SMR4643 Specifications
- Part NumberRF1S25N06SMR4643
- CategoryTransistors - FETs, MOSFETs - Arrays
- ManufacturerHarris Corporation
- Description25A, 60V, 0.047 OHM, N-CHANNEL
- PackageBulk
- Series-
- Operating Temperature-
- Mounting Type-
- Package / Case-
- Supplier Device Package-
- Power - Max-
- FET Type-
- FET Feature-
- Drain to Source Voltage (Vdss)-
- Current - Continuous Drain (Id) @ 25°C-
- Rds On (Max) @ Id, Vgs-
- Vgs(th) (Max) @ Id-
- Gate Charge (Qg) (Max) @ Vgs-
- Input Capacitance (Ciss) (Max) @ Vds-
Application of RF1S25N06SMR4643
RF1S25N06SMR4643 Datasheet
RF1S25N06SMR4643 Datasheet , Bulk
RF1S25N06SMR4643 Classification
Transistors - FETs, MOSFETs - Arrays
FAQ about Transistors - FETs, MOSFETs - Arrays
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1. What is MOSFET and how does it work?
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), that is, metal-oxide-semiconductor field effect transistor, is a transistor that uses electric field effect to control conduction and shutdown. MOSFET controls the flow of current between the source and drain by applying voltage to the gate. Its working principle is as follows:
Working principle:
When a positive voltage is applied to the gate, the electric field causes the impurities in the substrate to form an "open" n-type or p-type conductive area, i.e., a channel, between the gate and the substrate. A capacitor is formed between the oxide layer above the channel and the gate, called the gate capacitance. When the channel conductive area extends to the source and drain, the MOSFET is in the on state. In the on state, the voltage difference between the source and the drain drives the current to flow through the conductive area.
When a negative voltage is applied to the gate, the channel on the substrate shrinks, the conductivity weakens, and the current between the source and the drain decreases. When the gate voltage continues to decrease, the channel eventually disappears, the MOSFET is in the off state, there is no conductive path between the source and the drain, and the MOSFET is in a high-resistance state.
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2. What are the two types of MOSFET transistors?
There are two main types of MOSFET transistors: enhancement MOSFET and depletion MOSFET.
Enhancement MOSFET
When the gate voltage of the enhancement MOSFET is zero, there is no conductive channel between the source and the drain. Only when the gate voltage reaches a certain threshold voltage, the conductive channel will be formed and the current will begin to flow. This type of MOSFET requires a positive voltage to be applied to the gate to turn on, and is in a high-resistance state when no voltage is applied.
Depletion-type MOSFET
When the gate voltage of a depletion-type MOSFET is zero, a conductive channel already exists between the source and drain. Applying a negative gate voltage can reduce or deplete the conductive channel, thereby controlling the current. This type of MOSFET is already turned on when no voltage is applied, and needs to be turned off by applying a negative voltage.
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3. Is MOSFET a transistor?
MOSFET is a type of transistor. MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a metal oxide semiconductor field effect transistor, which is a type of field effect transistor.
Basic concepts and characteristics of MOSFET
MOSFET is an insulated gate field effect transistor that mainly controls the conductive channel between the source and the drain through the gate voltage. Its working principle is to apply voltage to the gate to form an electric field, thereby controlling the charge distribution on the surface of the semiconductor and thus controlling the flow of current. MOSFET has the advantages of high input impedance, low noise, and good frequency characteristics, and is widely used in analog circuits and digital circuits.
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