Rectron RM150N60HD Trench Enhancement Mode Power MOSFET

Rectron RM150N60HD Trench Enhancement Mode Power MOSFET
The Rectron RM150N60HD Trench Enhancement Mode Power MOSFETs feature advanced Trench technology and design to provide excellent RDS(ON) and low gate charge. The device has good stability and uniformity with high single-pulse avalanche energy. The RM150N60HD is ideal for hard switching and high frequency circuits, power switches and uninterruptible power supplies.
The Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFETs are housed in a compact TO-263-2L package, ideal for space-constrained applications.

feature
60V Drain-Source Voltage (V DS )
150A Continuous Drain Current (ID )
600A Pulsed Drain Current (I DM )
3.6mΩ typical R DS(ON)
163nC total gate charge (Q g )
Excellent Q g x R DS(on)
220W maximum power consumption (P D )
6500pF Input Capacitance (C ISS )
650pF Output Capacitor (C OSS )
-55°C to 175°C Operating Junction and Storage Temperature Range (T J ,T STG )
TO-263-2L Package
Lead-free lead plating
100% UIS Tested
application
Power switch application
Hard switching and high frequency circuits
ups