AU2PJHM3_A/I vs AR3PMHM3_A/I
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| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | Vishay Semiconductor - Diodes Division | Vishay Semiconductor - Diodes Division |
| Description | DIODE AVALANCHE 600V 1.6A TO277A | DIODE AVALANCH 1KV 1.6A TO277A |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, eSMP® | Automotive, AEC-Q101, eSMP® |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) | TO-277A (SMPC) |
| Diode Type | Avalanche | Avalanche |
| Current - Average Rectified (Io) | 1.6A | 1.6A |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 2 A | 1.9 V @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 800 V |
| Capacitance @ Vr, F | 42pF @ 4V, 1MHz | 34pF @ 4V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 1000 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns | 120 ns |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C |
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1. What is a single rectifier diode?
A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.
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2. What is a fast recovery diode?
Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.
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3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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4. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

