IS34ML01G081-BLI vs AS4C64M16D3B-12BAN

Part Number	IS34ML01G081-BLI	AS4C64M16D3B-12BAN
Category	General Memory	General Memory
Manufacturer	ISSI, Integrated Silicon Solution Inc	Alliance Memory, Inc.
Description	IC FLASH 1GBIT PARALLEL 63VFBGA	IC DRAM 1GBIT PARALLEL 96FBGA
Package	Tray	Cut Tape (CT)
Series	-	-
Voltage - Supply	2.7V ~ 3.6V	1.425V ~ 1.575V
Operating Temperature	-40°C ~ 85°C (TA)	-40°C ~ 105°C (TC)
Mounting Type	Surface Mount	Surface Mount
Package / Case	63-VFBGA	96-TFBGA
Supplier Device Package	63-VFBGA (9x11)	96-FBGA (9x13)
Memory Size	1Gb (128M x 8)	1Gb (64M x 16)
Technology	FLASH - NAND (SLC)	SDRAM - DDR3
Memory Type	Non-Volatile	Volatile
Clock Frequency	-	800 MHz
Access Time	25 ns	20 ns
Memory Format	FLASH	DRAM
Write Cycle Time - Word, Page	25ns	15ns
Memory Interface	Parallel	Parallel

1. Is there a relationship between the capacity and speed of memory?

The capacity and speed of memory are not directly related. The capacity refers to the amount of data that the memory can hold, while the speed determines the speed at which the memory reads and writes data. Generally speaking, faster memory such as RAM has a smaller capacity, while large-capacity storage such as HDD is relatively slow.
2. What is the difference between SRAM and DRAM?

SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.
3. Why is the DRAM refresh rate important?

DRAM needs to be refreshed regularly to maintain data. The refresh rate affects the power consumption and speed of the memory. The higher the refresh rate, the faster the memory responds, but it also increases power consumption.
4. How to extend the life of memory devices?

Measures such as regular data backup, avoiding excessive reading and writing of memory, ensuring proper temperature control, and preventing power fluctuations can help extend the life of memory.