JANTX2N6990 vs ZDT6758TA

Part Number
JANTX2N6990
ZDT6758TA
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
Manufacturer Microchip Technology Diodes Incorporated
Description TRANS 4NPN 50V 0.8A TRANS NPN/PNP 400V 0.5A SM8
Package Tape & Reel (TR) Tube
Series Military, MIL-PRF-19500/559 -
Operating Temperature -65°C ~ 200°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 14-Flatpack SOT-223-8
Supplier Device Package 14-Flatpack SM8
Power - Max 400mW 2.75W
Transistor Type 4 NPN (Quad) NPN, PNP
Current - Collector (Ic) (Max) 800mA 500mA
Voltage - Collector Emitter Breakdown (Max) 50V 400V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 10µA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 40 @ 200mA, 10V
Frequency - Transition - 50MHz
  • 1. What are the typical configurations in BJT arrays?

    They can include combinations such as dual NPN, dual PNP, or mixed NPN and PNP transistors. Some arrays also include pre-biased transistors for specific applications.

  • 2. What is a pre-biased BJT array?

    Pre-biased arrays have integrated resistors, simplifying circuit design and reducing external component count, ideal for switching or logic applications.

  • 3. What are the limitations of BJT arrays?

    While they save space, they can limit flexibility if specific transistor types or configurations are needed. Also, thermal coupling might not always be beneficial in all scenarios.

  • 4. How do BJT arrays compare to MOSFET arrays?

    BJT arrays are preferred for applications requiring high current gain and faster switching, while MOSFETs are better for low-power and high-efficiency applications.

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