MBRD5200TR vs STTH1R02U
| Part Number |
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| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | SMC Diode Solutions | STMicroelectronics |
| Description | DIODE SCHOTTKY 200V 5A DPAK | DIODE GEN PURP 200V 1.5A SMB |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | DO-214AA, SMB |
| Supplier Device Package | DPAK | SMB |
| Diode Type | Schottky | Standard |
| Current - Average Rectified (Io) | 5A | 1.5A |
| Voltage - Forward (Vf) (Max) @ If | 920 mV @ 5 A | 1 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 200 V | 3 µA @ 200 V |
| Capacitance @ Vr, F | 150pF @ 5V, 1MHz | - |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 200 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | 30 ns |
| Operating Temperature - Junction | -55°C ~ 150°C | 175°C (Max) |
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1. What is a single rectifier diode?
A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.
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2. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
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3. Can a single rectifier diode be used for high-frequency applications?
Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
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4. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
