PESD5V0L6UAS,118 vs LXES15AAA1-100
| Part Number |
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| Category | TVS - Diodes | TVS - Diodes |
| Manufacturer | NXP USA Inc. | Murata Electronics |
| Description | TVS DIODE 5VWM 15VC 8TSSOP | TVS DIODE 0402 |
| Package | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 0402 (1005 Metric) |
| Series | - | - |
| Type | Zener | Zener |
| Operating Temperature | -65°C ~ 150°C (TA) | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 0402 (1005 Metric) |
| Supplier Device Package | 8-TSSOP | 1005 |
| Applications | General Purpose | General Purpose |
| Unidirectional Channels | 6 | - |
| Voltage - Reverse Standoff (Typ) | 5V (Max) | - |
| Voltage - Breakdown (Min) | 6.4V | - |
| Voltage - Clamping (Max) @ Ipp | 15V | - |
| Current - Peak Pulse (10/1000µs) | 2.5A (8/20µs) | - |
| Power - Peak Pulse | 35W | - |
| Power Line Protection | No | No |
| Capacitance @ Frequency | 16pF @ 1MHz | 0.05pF @ 1MHz |
| Bidirectional Channels | - | 1 |
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1. What is the difference between TVS and ordinary diodes?
The main difference between TVS diodes and ordinary diodes lies in their working principle, application scenarios and characteristics.
Working principle and application scenarios
TVS diode: TVS diode (Transil Voltage Suppressor) is a high-efficiency protection device that stabilizes and suppresses overvoltage based on the breakdown effect of PN junction. When the voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and release the overvoltage to ground, thus protecting the precision components in the circuit from damage by surge pulses. TVS diodes are widely used in computer systems, communication equipment, automotive electronics, household appliances and other fields to suppress transient overvoltage and electromagnetic interference.
Ordinary Diode: The main function of an ordinary diode is unidirectional conductivity, allowing current to pass in one direction and blocking reverse current. They are widely used in rectification, signal modulation, power management and other scenarios.
Feature comparison
Current size: The Zener breakdown current of TVS diodes is small, usually around 1mA, while the breakdown current of ordinary diodes is larger.
Classification: TVS diodes are divided into unipolar and bipolar according to polarity; ordinary diodes are divided into low-voltage and high-voltage types according to the level of voltage regulation, as well as N-type and P-type materials.
Voltage regulation characteristics: The voltage characteristics of TVS diodes are nonlinear, the resistance before breakdown is high, and the voltage remains constant after breakdown; the voltage of ordinary diodes remains constant at the critical reverse breakdown point, realizing the voltage stabilization function.
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2. TVS is the abbreviation of diode. What does it mean?
TVS is the abbreviation of Transient Voltage Suppressor, also known as Transient Voltage Suppression Diode.
How TVS diodes work
TVS diodes work using the avalanche breakdown effect. When the TVS diode receives a reverse voltage, the depletion layer near its PN junction will increase, causing the electric field intensity to increase, which in turn triggers the avalanche effect and causes the reverse current to increase sharply. Unlike ordinary diodes, TVS diodes can recover after avalanche breakdown and continue to work normally. -
3. How do TVS diodes fail?
The failure modes of TVS diodes mainly include short circuit failure, open circuit failure and performance degradation. These failure modes can have a serious impact on the normal operation and protection functions of the circuit.
short circuit fault
Short circuit failure is one of the most common failure modes of TVS diodes. When a TVS diode is short-circuited, it changes to a low-impedance state, allowing a large amount of current to pass through, which may cause the circuit to not function properly and may even damage other circuit components. Causes of short circuit faults include:
Thermal breakdown: In a high temperature environment or when subjected to excessive transient energy impact, the PN junction of the TVS diode may undergo thermal breakdown, resulting in a short circuit.
Over-electrical stress: When the transient pulse energy exceeds the energy that the TVS can withstand, it will cause over-electrical stress damage and even directly cause burnout.
Manufacturing process issues: Such as chip bonding interface voids, mesa defects, strong accumulation layer or strong inversion layer on the surface, chip cracks, uneven impurity diffusion, etc., which may cause short circuit failures of TVS diodes during manufacturing or use.
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4. What is the difference between TVS diodes and MOVs?
The main differences between TVS diodes and MOV varistors lie in their working principles, application scenarios and performance parameters.
Working principle
TVS diode: TVS diode (Transient Voltage Suppressor) is a semiconductor device with a high-sensitivity N/P junction. When the reverse voltage exceeds its breakdown voltage, the TVS diode will conduct quickly and introduce the surge current into the ground, thereby protecting the subsequent circuit. The response speed of TVS diodes is very fast, usually within nanoseconds.
MOV varistor: MOV varistor (Metal-Oxide Varistor) is a multi-layer varistor made of multi-layer zinc oxide material. When the voltage exceeds its varistor voltage, the MOV will conduct, absorb the surge energy, and clamp the voltage within a safe range. MOV has a long response time, usually completing the response within microseconds.
