RS2KHE3_A/H vs RS2DHE3_A/I

Part Number
RS2KHE3_A/H
RS2DHE3_A/I
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Vishay Semiconductor - Diodes Division Vishay Semiconductor - Diodes Division
Description DIODE GEN PURP 800V 1.5A DO214AA DIODE GEN PURP 200V 1.5A DO214AA
Package Tape & Reel (TR) Tape & Reel (TR)
Series Automotive, AEC-Q101 Automotive, AEC-Q101
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB)
Diode Type Standard Standard
Current - Average Rectified (Io) 1.5A 1.5A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 1.5 A 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr 5 µA @ 800 V 5 µA @ 200 V
Capacitance @ Vr, F 17pF @ 4V, 1MHz 20pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max) 800 V 200 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns 150 ns
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
  • 1. What is a single rectifier diode?

    A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.

  • 2. What is the maximum reverse voltage (PIV) of a rectifier diode?

    The Peak Inverse Voltage (PIV) is the maximum reverse voltage that a diode can withstand. When selecting a diode, the PIV must be higher than the maximum reverse voltage in the circuit, usually twice or more the input voltage.

  • 3. Can a single rectifier diode be used for high-frequency applications?

    Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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