SDM2A20CSP-7 vs B150Q-13-F

Part Number
SDM2A20CSP-7
B150Q-13-F
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Diodes Incorporated Diodes Incorporated
Description DIODE SCHTKY 20V 2A X3-WLB1406-2 DIODE SCHOTTKY 50V 1A SMA
Package -Reel® -Reel®
Series - Automotive, AEC-Q101
Mounting Type Surface Mount Surface Mount
Package / Case 2-XDFN DO-214AC, SMA
Supplier Device Package X3-WLB1406-2 SMA
Diode Type Schottky Schottky
Current - Average Rectified (Io) 2A 1A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 2 A 700 mV @ 1 A
Current - Reverse Leakage @ Vr 80 µA @ 20 V 500 µA @ 40 V
Capacitance @ Vr, F 70pF @ 5V, 1MHz 110pF @ 4V, 1MHz
Voltage - DC Reverse (Vr) (Max) 20 V 50 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Operating Temperature - Junction -55°C ~ 150°C -65°C ~ 150°C
  • 1. How to choose the appropriate rectifier diode?

    When making a choice, the following factors need to be considered:

    Current capacity: Determine the maximum current that the diode needs to handle.

    Reverse voltage: Ensure that the reverse voltage of the diode can withstand the highest voltage in the circuit.

    Forward voltage drop: A lower forward voltage drop can improve circuit efficiency.

    Recovery time: For high-frequency applications, choose fast recovery or Schottky diodes.

  • 2. What is forward voltage drop?

    Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.

  • 3. What is a fast recovery diode?

    Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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