SJPB-H4V vs SJPB-H4
| Part Number |
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| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | Sanken | Sanken |
| Description | DIODE SCHOTTKY 40V 2A SJP | DIODE SCHOTTKY 40V 2A SJP |
| Package | Bulk | Tape & Reel (TR) |
| Series | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 2-SMD, J-Lead | 2-SMD, J-Lead |
| Supplier Device Package | SJP | SJP |
| Diode Type | Schottky | Schottky |
| Current - Average Rectified (Io) | 2A | 2A |
| Voltage - Forward (Vf) (Max) @ If | 550 mV @ 2 A | 550 mV @ 2 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 40 V | 200 µA @ 40 V |
| Capacitance @ Vr, F | - | - |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | - |
| Operating Temperature - Junction | -40°C ~ 150°C | -40°C ~ 150°C |
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1. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
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2. Can a single rectifier diode be used for high-frequency applications?
Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
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3. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
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4. How to improve the efficiency of rectifier diodes?
The use of Schottky diodes or fast recovery diodes can reduce forward voltage drop and reverse recovery time, thereby improving the efficiency of rectifier circuits, especially in high-frequency applications.
