SK55C R7 vs SS310 R6
| Part Number |
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| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
| Description | DIODE SCHOTTKY DO214AB | DIODE SCHOTTKY DO214AB |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) |
| Diode Type | Schottky | Schottky |
| Current - Average Rectified (Io) | 5A | 3A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 750 mV @ 5 A | 850 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 50 V | 100 µA @ 100 V |
| Capacitance @ Vr, F | - | - |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 100 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | - |
| Operating Temperature - Junction | -55°C ~ 150°C | -55°C ~ 150°C |
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1. What are the common applications of a single rectifier diode?
They are commonly used in power circuits, chargers, AC to DC converters, motor drives, circuit protection, and other electronic devices to convert AC power to DC power or protect circuits from reverse current.
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2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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3. Can a single rectifier diode be used for high-frequency applications?
Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.
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4. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
