ZXTD619MCTA vs CMLT3906E TR

Part Number
ZXTD619MCTA
CMLT3906E TR
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes Incorporated Central Semiconductor Corp
Description TRANS 2NPN 50V 4A 8DFN TRANS PNP 60V 0.2A SOT563
Package Bulk Tape & Reel (TR)
Series - -
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-WDFN Exposed Pad SOT-563, SOT-666
Supplier Device Package W-DFN3020-8 SOT-563
Power - Max 1.7W 150mW
Transistor Type 2 NPN (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 4A 200mA
Voltage - Collector Emitter Breakdown (Max) 50V 40V
Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 200mA, 2V 150 @ 10mA, 1V
Frequency - Transition 100MHz 300MHz
  • 1. What are the typical configurations in BJT arrays?

    They can include combinations such as dual NPN, dual PNP, or mixed NPN and PNP transistors. Some arrays also include pre-biased transistors for specific applications.

  • 2. What advantages do BJT arrays offer over single transistors?

    BJT arrays provide better matching between transistors, reduce PCB space, and improve thermal performance since all transistors share the same substrate.

  • 3. What packages are BJT arrays available in?

    Common packages include surface-mount types like SC-88, SOT-363, or TSSOP, which are compact and suitable for space-constrained designs.

  • 4. What are key specifications to consider when selecting a BJT array?

    Important parameters include collector current (Ic), voltage rating (Vce), hFE (current gain), and thermal resistance for reliability in operation.

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