SS22/1 vs U3C-M3/9AT
| Part Number |
|
|
| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | Vishay Semiconductor - Diodes Division | Vishay Semiconductor - Diodes Division |
| Description | DIODE SCHOTTKY 20V 2A DO214AA | DIODE GEN PURP 150V 2A DO214AB |
| Package | Bulk | Cut Tape (CT) |
| Series | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | DO-214AA, SMB | DO-214AB, SMC |
| Supplier Device Package | DO-214AA (SMB) | DO-214AB (SMC) |
| Diode Type | Schottky | Standard |
| Current - Average Rectified (Io) | 2A | 2A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 2 A | 900 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 20 V | 10 µA @ 150 V |
| Capacitance @ Vr, F | - | 25pF @ 4V, 1MHz |
| Voltage - DC Reverse (Vr) (Max) | 20 V | 150 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | 30 ns |
| Operating Temperature - Junction | -65°C ~ 125°C | -55°C ~ 150°C |
-
1. What is a single rectifier diode?
A single rectifier diode is an electronic component used to convert alternating current (AC) to direct current (DC), typically used in power supplies, chargers, and other circuits that require DC power.
-
2. What is forward voltage drop?
Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.
-
3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
-
4. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
