ON Semiconductor MUN5312DW1T2G
- MUN5312DW1T2G
- ON Semiconductor
- TRANS NPN/PNP PREBIAS SOT363
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- MUN5312DW1T2G Datasheet
- 6-TSSOP, SC-88, SOT-363
- Bulk
- Lead free / RoHS Compliant
- 2839
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number MUN5312DW1T2G |
Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer ON Semiconductor |
Description TRANS NPN/PNP PREBIAS SOT363 |
Package Bulk |
Series - |
Mounting Type Surface Mount |
Package / Case 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package SC-88/SC70-6/SOT-363 |
Power - Max 385mW |
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) 100mA |
Voltage - Collector Emitter Breakdown (Max) 50V |
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) 500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V |
Frequency - Transition - |
Resistor - Base (R1) 22kOhms |
Resistor - Emitter Base (R2) 22kOhms |
Package_case 6-TSSOP, SC-88, SOT-363 |
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