SCTW90N65G2V

STMicroelectronics SCTW90N65G2V

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  • SCTW90N65G2V
  • STMicroelectronics
  • SICFET N-CH 650V 90A HIP247
  • Transistors - FETs, MOSFETs - Single
  • SCTW90N65G2V Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3481
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SCTW90N65G2V
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
STMicroelectronics
Description
SICFET N-CH 650V 90A HIP247
Package
Tube
Series
-
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
HiP247™
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
390W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 400 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-247-3

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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