Vishay Siliconix SI7342DP-T1-GE3
- SI7342DP-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 9A PPAK SO-8
- Transistors - FETs, MOSFETs - Single
- SI7342DP-T1-GE3 Datasheet
- PowerPAK® SO-8
- PowerPAK? SO-8
- Lead free / RoHS Compliant
- 28168
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI7342DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 9A PPAK SO-8 |
Package PowerPAK? SO-8 |
Series TrenchFET? |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 |
Supplier Device Package PowerPAK® SO-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1.8W (Ta) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 9A (Ta) |
Rds On (Max) @ Id, Vgs 8.25 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 15V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Vgs (Max) ±12V |
Package_case PowerPAK® SO-8 |
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