Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F
- SSM6J215FE(TE85L,F
- Toshiba Semiconductor and Storage
- MOSFET P CH 20V 3.4A ES6
- Transistors - FETs, MOSFETs - Single
- SSM6J215FE(TE85L,F Datasheet
- SOT-563, SOT-666
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1018
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SSM6J215FE(TE85L,F |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET P CH 20V 3.4A ES6 |
Package Cut Tape (CT) |
Series U-MOSVI |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package ES6 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 500mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) |
Rds On (Max) @ Id, Vgs 59mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case SOT-563, SOT-666 |
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