2SA1641T-TL-E

ON Semiconductor 2SA1641T-TL-E

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  • 2SA1641T-TL-E
  • ON Semiconductor
  • BIP PNP 8A 20V
  • Transistors - Bipolar (BJT) - Single
  • 2SA1641T-TL-E Datasheet
  • -
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2859
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
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What is 2SA1641T-TL-E

ON Semiconductor Part Number 2SA1641T-TL-E（Transistors - Bipolar (BJT) - Single）, developed and manufactured by ON Semiconductor, distributed globally by Jinftry. We distribute various electronic components from world-renowned brands and provide one-stop services, making us a trusted global electronic component distributor.

2SA1641T-TL-E is one of the part numbers distributed by Jinftry, and you can learn about its specifications/configurations, package/case, Datasheet, and other information here. Electronic components are affected by supply and demand, and prices fluctuate frequently. If you have a demand, please do not hesitate to send us an RFQ or email us immediately [email protected] Please inquire about the real-time unit price, Data Code, Lead time, payment terms, and any other information you would like to know. We will do our best to provide you with a quotation and reply as soon as possible.

2SA1641T-TL-E Specifications

  • Part Number2SA1641T-TL-E
  • CategoryTransistors - Bipolar (BJT) - Single
  • ManufacturerON Semiconductor
  • DescriptionBIP PNP 8A 20V
  • PackageBulk
  • Series-
  • Operating Temperature-
  • Mounting Type-
  • Package / Case-
  • Supplier Device Package-
  • Power - Max-
  • Transistor Type-
  • Current - Collector (Ic) (Max)-
  • Voltage - Collector Emitter Breakdown (Max)-
  • Vce Saturation (Max) @ Ib, Ic-
  • Current - Collector Cutoff (Max)-
  • DC Current Gain (hFE) (Min) @ Ic, Vce-
  • Frequency - Transition-

Application of 2SA1641T-TL-E

Bipolar - Single as the main function of the amplifier and switching element. In amplifier applications, BJTS are capable of amplifying the current of the input signal to drive a larger load. In switching applications, the BJT can be used as a high-speed switch to turn the current path between the collector and the emitter on or off by controlling the base current. In addition, BJT can also be used to build oscillators, mixers and other circuits.

2SA1641T-TL-E Datasheet

2SA1641T-TL-E Datasheet , Bulk

2SA1641T-TL-E Classification

Transistors - Bipolar (BJT) - Single

Bipolar (BJT) -Single refers to a single Bipolar Junction Transistor (BJT), which is a commonly used semiconductor device with two PN junctions, usually composed of an NPN or PNP structure. The BJT is capable of amplifying the current and regulating the current between the collector and emitter by controlling the base current. A single BJT is the basic building block of many electronic circuits and can be used for a variety of functions such as amplification, switching, and signal processing.

FAQ about Transistors - Bipolar (BJT) - Single

  • 1. Is PNP transistor bipolar?

    PNP transistor is a bipolar transistor. PNP transistor is a bipolar transistor used in electronic circuits to amplify, switch and control current. Its name "PNP" represents the three different semiconductor regions in its structure: two positive poles (P type) and one negative pole (N type).

  • 2. Are bipolar transistors still in use?

    Bipolar transistors are still in use and play an important role in many fields. Bipolar transistors, the full name of which is bipolar junction transistor (BJT), commonly known as triode, are electronic devices with three terminals, made of three parts of semiconductors with different doping levels. Its working principle involves the flow of two carriers, electrons and holes, so it is called bipolar.

  • 3. Is BJT transistor a bipolar device?

    BJT transistor is a bipolar junction transistor (Bipolar Junction Transistor, referred to as BJT), which is a bipolar device. BJT is composed of two PN junctions, divided into PNP and NPN types, and works through two PN junctions to achieve current amplification.
    The working principle of BJT is to amplify the collector current by controlling the base current. When the base potential is higher than the emitter potential, the emitter junction is in a forward biased state, and the collector junction is in a reverse biased state. Since the majority carrier concentration in the emitter region is greater than that in the base region, most of the electrons injected into the base region pass over the collector junction and enter the collector region, forming a collector current, thereby achieving current amplification.
    BJT is widely used in electronic circuits, such as amplifiers, switches, oscillators, etc., with amplification capabilities, linear amplification characteristics and high frequency response.

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ON Semiconductor
ON Semiconductor
Established in 1999, ON Semiconductor is a globally renowned leading semiconductor product supplier headquartered in Phoenix, Arizona, USA, with over 30000 employees. At first, ON Semiconductor was a branch of Phoenix Worldwide Semiconductor and later...
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