2SK209-GR(TE85L,F)

Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F)

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  • 2SK209-GR(TE85L,F)
  • Toshiba Semiconductor and Storage
  • TRANS SJT N-CH 10MA SC59
  • Transistors - FETs, MOSFETs - RF
  • 2SK209-GR(TE85L,F) Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4972
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SK209-GR(TE85L,F)
Category
Transistors - FETs, MOSFETs - RF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS SJT N-CH 10MA SC59
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 125°C (TA)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SC-59
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
150mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
10mA (Ta)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
13 pF @ 10 V
Vgs (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
-
Package_case
TO-236-3, SC-59, SOT-23-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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