2SK3309(TE24L,Q)

Toshiba Semiconductor and Storage 2SK3309(TE24L,Q)

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  • 2SK3309(TE24L,Q)
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 450V 10A TO220SM
  • Transistors - FETs, MOSFETs - Single
  • 2SK3309(TE24L,Q) Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16118
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
2SK3309(TE24L,Q)
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 450V 10A TO220SM
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-220SM
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
65W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
450 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Rds On (Max) @ Id, Vgs
650mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 10 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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