AOT3N100

Alpha & Omega Semiconductor Inc. AOT3N100

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  • AOT3N100
  • Alpha & Omega Semiconductor Inc.
  • MOSFET N-CH 1000V 2.8A TO220
  • Transistors - FETs, MOSFETs - Single
  • AOT3N100 Datasheet
  • TO-220-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3377
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
AOT3N100
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Alpha & Omega Semiconductor Inc.
Description
MOSFET N-CH 1000V 2.8A TO220
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
132W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Rds On (Max) @ Id, Vgs
6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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