APTGFQ25H120T2G

Microsemi Corporation APTGFQ25H120T2G

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  • APTGFQ25H120T2G
  • Microsemi Corporation
  • IGBT MODULE 1200V 40A 227W SP2
  • Transistors - IGBTs - Modules
  • APTGFQ25H120T2G Datasheet
  • SP2
  • Tray
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 891
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
APTGFQ25H120T2G
Category
Transistors - IGBTs - Modules
Manufacturer
Microsemi Corporation
Description
IGBT MODULE 1200V 40A 227W SP2
Package
Tray
Series
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
SP2
Supplier Device Package
SP2
Power - Max
227 W
Configuration
Full Bridge
Current - Collector (Ic) (Max)
40 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
250 µA
IGBT Type
NPT and Fieldstop
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 25A
Input Capacitance (Cies) @ Vce
2.02 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
SP2

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Microsemi Corporation
Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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