Microsemi Corporation APTM100DA33T1G
- APTM100DA33T1G
- Microsemi Corporation
- MOSFET N-CH 1000V 23A SP1
- Transistors - FETs, MOSFETs - Single
- APTM100DA33T1G Datasheet
- SP1
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 22412
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number APTM100DA33T1G |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Microsemi Corporation |
Description MOSFET N-CH 1000V 23A SP1 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SP1 |
Supplier Device Package SP1 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 390W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 23A (Tc) |
Rds On (Max) @ Id, Vgs 396mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7868 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SP1 |
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Microsemi Corporation
Microsemi Corporation offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; ...
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