BFU660F,115

NXP USA Inc. BFU660F,115

The picture is for reference only, please refer to the product specification

  • BFU660F,115
  • NXP USA Inc.
  • RF TRANS NPN 5.5V 21GHZ 4DFP
  • Transistors - Bipolar (BJT) - RF
  • BFU660F,115 Datasheet
  • SOT-343F
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2237
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BFU660F,115
Category
Transistors - Bipolar (BJT) - RF
Manufacturer
NXP USA Inc.
Description
RF TRANS NPN 5.5V 21GHZ 4DFP
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-343F
Supplier Device Package
4-DFP
Gain
12dB ~ 21dB
Power - Max
225mW
Transistor Type
NPN
Current - Collector (Ic) (Max)
60mA
Voltage - Collector Emitter Breakdown (Max)
5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 10mA, 2V
Frequency - Transition
21GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Package_case
SOT-343F

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NXP USA Inc.
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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