BSM75GB120DN2HOSA1

Infineon Technologies BSM75GB120DN2HOSA1

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  • BSM75GB120DN2HOSA1
  • Infineon Technologies
  • IGBT MOD 1200V 105A 625W
  • Transistors - IGBTs - Modules
  • BSM75GB120DN2HOSA1 Datasheet
  • Module
  • Tray
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 15757
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
BSM75GB120DN2HOSA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MOD 1200V 105A 625W
Package
Tray
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Power - Max
625 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
105 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
1.5 mA
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 75A
Input Capacitance (Cies) @ Vce
5.5 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
Module

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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