CSD13306WT

Texas Instruments CSD13306WT

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  • CSD13306WT
  • Texas Instruments
  • MOSFET N-CH 12V 3.5A 6DSBGA
  • Transistors - FETs, MOSFETs - Single
  • CSD13306WT Datasheet
  • 6-UFBGA, DSBGA
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16625
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
CSD13306WT
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Texas Instruments
Description
MOSFET N-CH 12V 3.5A 6DSBGA
Package
Cut Tape (CT)
Series
NexFET™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UFBGA, DSBGA
Supplier Device Package
6-DSBGA (1x1.5)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.9W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Rds On (Max) @ Id, Vgs
10.2mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 6 V
Vgs (Max)
±10V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
6-UFBGA, DSBGA

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Texas Instruments
Texas Instruments
Texas Instruments Incorporated designs and manufactures analog technologies, digital signal processing (DSP) and microcontroller (MCU) semiconductors. TI is a leader in semiconductor solutions for analog and digital embedded and applications processing. A global ...
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