DF200R12KE3HOSA1

Infineon Technologies DF200R12KE3HOSA1

The picture is for reference only, please refer to the product specification

  • DF200R12KE3HOSA1
  • Infineon Technologies
  • IGBT MODULE 1200V 1040W
  • Transistors - IGBTs - Modules
  • DF200R12KE3HOSA1 Datasheet
  • Module
  • Tray
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2079
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DF200R12KE3HOSA1
Category
Transistors - IGBTs - Modules
Manufacturer
Infineon Technologies
Description
IGBT MODULE 1200V 1040W
Package
Tray
Series
-
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Power - Max
1040 W
Configuration
Single
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
5 mA
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
Input
Standard
NTC Thermistor
No
Package_case
Module

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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