DMN3010LFG-13

Diodes Incorporated DMN3010LFG-13

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  • DMN3010LFG-13
  • Diodes Incorporated
  • MOSFET N-CH 30V 11A PWRDI3333
  • Transistors - FETs, MOSFETs - Single
  • DMN3010LFG-13 Datasheet
  • 8-PowerVDFN
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25605
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DMN3010LFG-13
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 30V 11A PWRDI3333
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerDI3333-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
900mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs
8.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2075 pF @ 15 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerVDFN

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568248857, 827259012, 316249462
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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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