DMN3029LFG-7

Diodes Incorporated DMN3029LFG-7

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  • DMN3029LFG-7
  • Diodes Incorporated
  • MOSFET N-CH 30V 5.3A PWRDI333-8
  • Transistors - FETs, MOSFETs - Single
  • DMN3029LFG-7 Datasheet
  • 8-PowerWDFN
  • 8-PowerWDFN
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 17070
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DMN3029LFG-7
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 30V 5.3A PWRDI333-8
Package
8-PowerWDFN
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
PowerDI3333-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Rds On (Max) @ Id, Vgs
18.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
580pF @ 15V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±25V
Package_case
8-PowerWDFN

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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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