Diodes Incorporated DMN3060LCA3-7
- DMN3060LCA3-7
- Diodes Incorporated
- MOSFET N-CH 30V 3.9A X4DSN1006-3
- Transistors - FETs, MOSFETs - Single
- DMN3060LCA3-7 Datasheet
- 3-XFDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 1380
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number DMN3060LCA3-7 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Diodes Incorporated |
Description MOSFET N-CH 30V 3.9A X4DSN1006-3 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 3-XFDFN |
Supplier Device Package X4-DSN1006-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 790mW |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta) |
Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 8V |
Vgs(th) (Max) @ Id 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 1.677 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 192 pF @ 15 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 8V |
Package_case 3-XFDFN |
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Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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