Diodes Incorporated DMN6013LFGQ-13
- DMN6013LFGQ-13
- Diodes Incorporated
- MOSFET N-CH 60V 10.3A PWRDI3333
- Transistors - FETs, MOSFETs - Single
- DMN6013LFGQ-13 Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4081
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number DMN6013LFGQ-13 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Diodes Incorporated |
Description MOSFET N-CH 60V 10.3A PWRDI3333 |
Package Cut Tape (CT) |
Series Automotive, AEC-Q101 |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package PowerDI3333-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 45A (Tc) |
Rds On (Max) @ Id, Vgs 13mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 55.4 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2577 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerVDFN |
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Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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