DMN6013LFGQ-13

Diodes Incorporated DMN6013LFGQ-13

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  • DMN6013LFGQ-13
  • Diodes Incorporated
  • MOSFET N-CH 60V 10.3A PWRDI3333
  • Transistors - FETs, MOSFETs - Single
  • DMN6013LFGQ-13 Datasheet
  • 8-PowerVDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4081
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
DMN6013LFGQ-13
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Diodes Incorporated
Description
MOSFET N-CH 60V 10.3A PWRDI3333
Package
Cut Tape (CT)
Series
Automotive, AEC-Q101
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
PowerDI3333-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2577 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerVDFN

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Diodes Incorporated
Diodes Incorporated
Diodes Incorporated - Diodes Incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete, logic, analog and mixed-signal semiconductor markets. In November 2015, Pericom Semiconductor became ...
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