EPC EPC2104ENG
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- EPC2104ENG
- EPC
- TRANS GAN 2N-CH 100V BUMPED DIE
- Transistors - FETs, MOSFETs - Arrays
- EPC2104ENG Datasheet
- Die
- Die
-
Lead free / RoHS Compliant - 11316
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number EPC2104ENG |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer EPC |
| Description TRANS GAN 2N-CH 100V BUMPED DIE |
| Package Die |
| Series eGaN? |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case Die |
| Supplier Device Package Die |
| FET Type 2 N-Channel (Half Bridge) |
| FET Feature GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) 100V |
| Current - Continuous Drain (Id) @ 25°C 23A |
| Rds On (Max) @ Id, Vgs 6.3 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id 2.5V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V |
| Package_case Die |
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