EPC2105ENG

EPC EPC2105ENG

The picture is for reference only, please refer to the product specification

  • EPC2105ENG
  • EPC
  • TRANS GAN 2N-CH 80V BUMPED DIE
  • Transistors - FETs, MOSFETs - Arrays
  • EPC2105ENG Datasheet
  • Die
  • Die
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1573
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
EPC2105ENG
Category
Transistors - FETs, MOSFETs - Arrays
Manufacturer
EPC
Description
TRANS GAN 2N-CH 80V BUMPED DIE
Package
Die
Series
eGaN?
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Rds On (Max) @ Id, Vgs
14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 40V
Package_case
Die

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