EPC EPC2801
- EPC2801
- EPC
- TRANS GAN 100V 25A BUMPED DIE
- Transistors - FETs, MOSFETs - Single
- EPC2801 Datasheet
- Die
- Die
- Lead free / RoHS Compliant
- 21154
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number EPC2801 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer EPC |
Description TRANS GAN 100V 25A BUMPED DIE |
Package Die |
Series eGaN? |
Operating Temperature -40°C ~ 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case Die |
Supplier Device Package Die |
Technology GaNFET (Gallium Nitride) |
FET Type N-Channel |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 25A (Ta) |
Rds On (Max) @ Id, Vgs 7 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 50V |
Drive Voltage (Max Rds On, Min Rds On) 5V |
Vgs (Max) +6V, -5V |
Package_case Die |
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