EVK-PLA1106A

EVK-PLA1106A three-phase full-bridge 1200V/340A SiC inverter development kit module

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  • EVK-PLA1106A
  • EVK-PLA1106A three-phase full-bridge 1200V/340A SiC inverter development kit module
  • CISSOID
  • SiC Smart Power Module
  • EVK-PLA1106A Datasheet
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 465
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
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  • Three-phase 1200V/340A SiC smart power module (CXT-PLA3SA12340AA)
  • OLEA T222 FPCU based controller board
  • Designed based on ISO-26262 ASIL-D certification
  • Advanced control algorithms for energy-efficient systems
  • Closed-loop control based on field-oriented control and variable SVPWM switching up to 50 kHz with short dead-time compensation
  • Power device junction temperature: -40°C to +175°C
  • Gate driver ambient temperature: -40°C to 125°C
  • Drain-source breakdown voltage: 1200V
  • Low on-resistance: 4.19mOhms typical.
  • Maximum continuous current: 340A at Tc=25°C
  • Lightweight AlSiC pin-fin substrate for liquid cooling
  • Junction-to-case thermal resistance: 0.167 °C/W (typ.)
  • Switching loss @ 600V/300A: Eon=7.48mJ/Eoff=7.39mJ
  • Switching frequency: max. 50kHz
  • Isolation (backplane - power pins): 3600VAC @50Hz (1min)
  • Common mode transient immunity: >50kV/μs
  • Low parasitic capacitance (primary-secondary): 11pF typical per phase
  • Gate driver protection:
  • Undervoltage lockout (UVLO)
  • desaturation protection
  • Soft shutdown shutdown (SSD)
  • Negative gate drive (-3V)
  • Active Miller Clamp (AMC)
  • Gate-source short circuit protection
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    CISSOID
    CISSOID
    CISSOID is a leader in high-temperature semiconductor solutions for various industries. Headquartered in Belgium, it provides standard products and customized solutions for power management, power conversion and signal conditioning in extreme temperatures and...
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