FCP11N60N

ON Semiconductor FCP11N60N

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  • FCP11N60N
  • ON Semiconductor
  • MOSFET N-CH 600V 10.8A TO220-3
  • Transistors - FETs, MOSFETs - Single
  • FCP11N60N Datasheet
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1369
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FCP11N60N
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 600V 10.8A TO220-3
Package
Tube
Series
SupreMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
94W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.8A (Tc)
Rds On (Max) @ Id, Vgs
299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1505 pF @ 100 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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ON Semiconductor
ON Semiconductor
ON Semiconductor is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, ...
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