FCPF850N80Z

Fairchild Semiconductor FCPF850N80Z

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  • FCPF850N80Z
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, N
  • Transistors - FETs, MOSFETs - Single
  • FCPF850N80Z Datasheet
  • TO-220-3 Full Pack
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2023
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FCPF850N80Z
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, N
Package
Bulk
Series
SuperFET® II
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
28.4W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1.315 pF @ 100 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack

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Fairchild Semiconductor
Fairchild Semiconductor
Fairchild is now part of ON Semiconductor Together, we deliver a more extensive product portfolio of power discretes, ICs and power modules, plus a complete offering of low, mid and high voltage products ...
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