Fairchild Semiconductor FDB0260N1007L
- FDB0260N1007L
- Fairchild Semiconductor
- MOSFET N-CH 100V 200A TO263-7
- Transistors - FETs, MOSFETs - Single
- FDB0260N1007L Datasheet
- TO-263-7, D²Pak (6 Leads + Tab)
- Bulk
- Lead free / RoHS Compliant
- 1882
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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Part Number FDB0260N1007L |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Fairchild Semiconductor |
Description MOSFET N-CH 100V 200A TO263-7 |
Package Bulk |
Series PowerTrench® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package TO-263-7 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.8W (Ta), 250W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 200A (Tc) |
Rds On (Max) @ Id, Vgs 2.6mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 8.545 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-7, D²Pak (6 Leads + Tab) |
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