FDD16AN08A0

Fairchild Semiconductor FDD16AN08A0

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  • FDD16AN08A0
  • Fairchild Semiconductor
  • POWER FIELD-EFFECT TRANSISTOR, 9
  • Transistors - FETs, MOSFETs - Single
  • FDD16AN08A0 Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2381
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
FDD16AN08A0
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Fairchild Semiconductor
Description
POWER FIELD-EFFECT TRANSISTOR, 9
Package
Bulk
Series
UltraFET™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
-
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
135W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1874 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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Fairchild Semiconductor
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